NEXT-GENERATION FURNACE TECHNOLOGY
FOR SiC cRYSTAL GROWTH

SiC∙S develops advanced Physical Vapor Transport (PVT) furnaces engineered for stable, reproducible silicon carbide growth. Built on decades of experience in SiC process equipment, our furnaces combine robust design, accurate process control.

Our 12-inch PVT furnaces supports larger wafer formats empowering manufacturers to meet the fast-growing global demand for high-efficiency power electronics.

SiC∙S 12i sets a new standard for industrial SiC crystal growth. The foundation is built on early industrial SiC development and pioneering collaborations with leading Swedish research institutions - a legacy that continues to shape our technology today.